Reduction of the hydrogen degradation in SrBi2(Ta1−xNbx)2O9 by TiN barrier metal
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1315621
Reference11 articles.
1. Fatigue-free ferroelectric capacitors with platinum electrodes
2. Quantitative measurement of space‐charge effects in lead zirconate‐titanate memories
3. H2 damage of ferroelectric Pb(Zr,Ti)O3 thin-film capacitors—The role of catalytic and adsorptive activity of the top electrode
4. H2 damage of ferroelectric Pb(Zr,Ti)O3 thin-film capacitors—The role of catalytic and adsorptive activity of the top electrode
5. Analysis of the degradation of PZT and SrBi2Ta2O9 thin films with a reductive process
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1. Fabrication of robust PbLa(Zr,Ti)O3 capacitor structures using insulating oxide encapsulation layers for FeRAM integration;Electronics Letters;2011
2. A NEW HIGH-RELIABLE 2T/1C FeRAM CELL;Integrated Ferroelectrics;2006-08-17
3. Ferroelectric Thin Films for Memory Application;Hyomen Kagaku;2005
4. Hydrogen-Sensitive Amorphous Ferroelectric Thin Film Capacitive Devices;Integrated Ferroelectrics;2002-01
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