High-resolution characterization of multiferroic heterojunction using aberration-corrected scanning transmission electron microscopy-Reference-Cited by-同舟云学术

High-resolution characterization of multiferroic heterojunction using aberration-corrected scanning transmission electron microscopy

Published:2017-04-24 Issue:17 Volume:110 Page:171602
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yuan Zhoushen¹,Ruan Jieji¹,Xie Lin¹,Pan Xiaoqing¹²,Wu Di¹^ORCID,Wang Peng¹

Affiliation:

1. National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

2. Department of Physics and Astronomy, University of California, Irvine, California 92697, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4982627

Reference53 articles.

1. Ferroelectric switch for spin injection

2. Reversible electrical switching of spin polarization in multiferroic tunnel junctions

3. Magnetic Tunnel Junctions with Ferroelectric Barriers: Prediction of Four Resistance States from First Principles

4. Ferroelectric Control of Spin Polarization

5. Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

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