Close spatial correlation and chemical effects in annealing of paramagnetic oxygen vacancies (E’1centers) in ion‐implanted amorphous SiO2
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336546
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1. Interaction between point defects in the Si–SiO2 system during the process of its formation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01
2. The distribution of defects created by xenon implantation into silica;Journal of Non-Crystalline Solids;1993-01
3. The location and annealing of paramagnetic oxygen vacancies (E1' centres) in silicon implanted with high doses of oxygen;Journal of Physics: Condensed Matter;1991-04-01
4. Amorphous Silicon Thin-Film Transistors Employing Photoprocessed Tantalum Oxide Films as Gate Insulators;Japanese Journal of Applied Physics;1990-01-20
5. Formation of paramagnetic defects in high‐purity silica by high‐energy ions;Journal of Applied Physics;1988-03
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