Electrical contacts to few-layer MoS2 with phase-engineering and metal intercalation for tuning the contact performance-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Electrical contacts to few-layer MoS2 with phase-engineering and metal intercalation for tuning the contact performance

Published:2021-05-14 Issue:18 Volume:154 Page:184705
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Zhang Wenjun¹^ORCID,Wang Qian²,Hu Liang¹³,Wu Jiansheng¹,Shi Xingqiang⁴

Affiliation:

1. Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

2. College of Physics and Electrical Engineering, Hubei University of Education, Wuhan 430205, China

3. Harbin Institute of Technology, Harbin 150080, China

4. College of Physics Science and Technology, Hebei University, Baoding 071002, China

Funder

National Natural Science Foundation of China-Guangdong Joint Fund

Science, Technology and Innovation Commission of Shenzhen Municipality

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0046338

Reference62 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Enhancement of Carrier Mobility in Semiconductor Nanostructures by Dielectric Engineering

3. Large-Area Epitaxial Monolayer MoS2

4. How Good Can Monolayer MoS2 Transistors Be?

5. Tuning the Schottky barrier height of the Pd–MoS2 contact by different strains

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Toward direct band gaps in typical 2D transition-metal dichalcogenides junctions via real and energy spaces tuning;Communications Materials;2024-09-13

2. Graphene/M₂OS (M = Ga, In) van der Waals Heterostructure with Robust Ohmic Contact;ACS Applied Electronic Materials;2024-03-26

3. Tunable Schottky barrier in graphene/XAg4Y (X, Y = S, Se, Te) heterostructures;Chinese Journal of Physics;2023-12

4. Stacking order and driving forces in the layered charge density wave phase of 1T-MX2 (M = Nb, Ta and X = S, Se);Materials Research Express;2023-04-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3