Giant negative electrocaloric effect in modified PbZrO3 antiferroelectric thin films doped with Mn

Abstract

Negative charge card refrigeration, as a new solid-state refrigeration technology, has garnered much interest with its broad application potential in the area of temperature control for sensors and electronic devices. In this study, antiferroelectric thin films of Pb1−xMnxZrO3 (x = 0.0%, 0.5%, 1.0%, 2.0%, abbreviated as PMZ-100x) were prepared on tin oxide doped with fluorine/glass substrates by the sol-gel method. When the variable temperature P–E loops under various applied electric fields are compared, the P–E loops gradually change from linear to typical double P–E loops. This result implies that temperature and electric field work together to induce the phase change. The negative electrocaloric effect of the PMZ-0.5 film is greatly enhanced at 50 °C, 444 kV/cm, ΔS = 16.75 J·K−1·kg−1, ΔT = −16.39 K, in comparison to the PbZrO3 film (ΔS = 11.84 J·K−1·kg−1, ΔT = −12.48 K at 75 °C, 421 kV/cm). The great cooling performance indicates that PMZ-100x films have excellent potential for use in integrated circuit solid-state cooling.