Microscopic nature of Staebler-Wronski defect formation in amorphous silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120740
Reference18 articles.
1. Reversible conductivity changes in discharge‐produced amorphous Si
2. Evidence for Light-Induced Increase of Si-H Bonds in Undopeda-Si: H
3. Photo-induced structural changes associated with the Staebler-Wronski effect in hydrogenated amorphous silicon
4. States in the gap and recombination in amorphous semiconductors
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