In situ measurement of the optical absorption coefficient of porous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1328785
Reference10 articles.
1. Effect of the quantum confinement on the optical absorption of porous silicon, investigated by a new in-situ method
2. Anodic Oxidation of Porous Silicon Layers Formed on Lightly p‐Doped Substrates
3. Atmospheric impregnation of porous silicon at room temperature
4. Carrier transport mechanisms in porous silicon in contact with a liquid phase: a diffusion process
5. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
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1. In situ and real-time optical study of passive chemical etching of porous silicon and its impact on the fabrication of thin layers and multilayers;Journal of Applied Physics;2023-08-28
2. Facile design and stabilization of a novel one-dimensional silicon-based photonic crystal microcavity;Journal of Applied Physics;2017-07-21
3. Porosity dependence of terahertz emission of porous silicon investigated using reflection geometry terahertz time-domain spectroscopy;Superlattices and Microstructures;2016-12
4. (Invited) Porous Silicon Dissolution Monitoring and Optical Constants Measurement Using in Situ Photoconduction in HF;ECS Transactions;2016-08-19
5. Measurement of Optical Constants of Wet Porous Silicon Using In Situ Photoconduction;ECS Journal of Solid State Science and Technology;2016
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