Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition

Published:2009-11-16 Issue:20 Volume:95 Page:201906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bayram C.,Péré-laperne N.,Razeghi M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3267101

Reference13 articles.

1. Band parameters for III–V compound semiconductors and their alloys

2. Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy

3. Erratum: “Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy” [Appl. Phys. Lett. 82, 4465 (2003)]

4. Near infrared absorption and room temperature photovoltaic response in AlN∕GaN superlattices grown by metal-organic vapor-phase epitaxy

5. Strain-induced interface instability in GaN∕AlN multiple quantum wells

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes;Semiconductor Science and Technology;2023-03-14

2. A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells;Applied Physics Letters;2022-04-25

3. Intersubband transitions in GaN-based heterostructures;Mid-infrared Optoelectronics;2020

4. Intersubband absorption in GaN nanowire heterostructures at mid-infrared wavelengths;Nanotechnology;2018-07-11

5. Infrared emitters using III-nitride semiconductors;Nitride Semiconductor Light-Emitting Diodes (LEDs);2018