Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101224
Reference10 articles.
1. Properties of Photoluminescence from ZnTe-ZnSe Superlattices
2. Properties of Photoluminescence from ZnTe-ZnSe Superlattices
3. Temperature dependence of photoluminescence of ZnS-ZnSe superlattices
4. Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy
5. Growth of ZnS/ZnTe and ZnSe/ZnTe superlattices by molecular beam epitaxy and atomic layer epitaxy
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1. 7.1.5 Quantum wells and superlattices based on ZnTe and its alloys;Growth and Structuring;2013
2. Molecular-beam epitaxial growth of CdZnTe/ZnTe QW structures and superlattices on GaAs (100) substrates for optoelectronics;SPIE Proceedings;1999-11-04
3. Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer;Semiconductors;1999-07
4. Optical and Structural Properties of ZnTeZnS Strained-Layer Superlattices;physica status solidi (b);1994-09-01
5. Optical properties of MBE-grown ZnTe on GaAs. Effects of a ZnSe buffer layer;Physica Status Solidi (a);1993-10-16
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