In-depth profiling of electron trap states in silicon-on-insulator layers and local mechanical stress near the silicon-on-insulator/buried oxide interface in separation-by-implanted-oxygen wafers-Reference-Cited by-同舟云学术

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In-depth profiling of electron trap states in silicon-on-insulator layers and local mechanical stress near the silicon-on-insulator/buried oxide interface in separation-by-implanted-oxygen wafers

Published:2010-12-15 Issue:12 Volume:108 Page:124505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nakajima Yoshikata,Toda Takahiro,Hanajiri Tatsuro,Toyabe Toru,Sugano Takuo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3520660

Reference25 articles.

1. Silicon-on-Insulator Technology: Materials to VLSI

2. Subthreshold slope of thin-film SOI MOSFET's

3. Subfemtojoule deep submicrometer-gate CMOS built in ultra-thin Si film on SIMOX substrates

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of Drain Electric Flux Passing Through the BOX Layer in SoI MOSFETs—Part I: Preparation for Modeling Based on Conformal Mapping;IEEE Transactions on Electron Devices;2014-09

2. Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor;Applied Physics A;2014-03-26

3. Quantitative Extraction of Electric Flux in the Buried-Oxide Layer and Investigation of Its Effects on MOSFET Characteristics;IEEE Transactions on Electron Devices;2013-12

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