Tensile strained island growth at step-edges on GaAs(110)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3498676
Reference24 articles.
1. Critical layer thickness for self-assembled InAs islands on GaAs
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Highly tensile-strained, type-II, Ga1−xInxAs/GaSb quantum wells
4. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
5. Band parameters for III–V compound semiconductors and their alloys
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4. Controlling Interface Morphology and Layer Crystallinity in Organic Heterostructures: Microscopic View on C60 Island Formation on Pentacene Buffer Layers;ACS Applied Materials & Interfaces;2019-08-28
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