Tunneling magnetoresistance sensors with different coupled free layers-Reference-Cited by-同舟云学术

Tunneling magnetoresistance sensors with different coupled free layers

Published:2017-05 Issue:5 Volume:7 Page:056666
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Liu Yen-Fu¹^ORCID,Yin Xiaolu¹,Yang Yi¹,Ewing Dan²,De Rego Paul J.³,Liou Sy-Hwang¹

Affiliation:

1. Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA

2. Department of Energy’s National Security Campus, Kansas City, Missouri 64147, USA

3. Department of Energy’s National Security Campus, Albuquerque, New Mexico 87106, USA

Funder

Honeywell Federal Manufacturing & Technogies

U.S. Department of Defense (DOD)

Division of Electrical, Communications and Cyber Systems (ECCS)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4977774

Reference33 articles.

1. Magnetoresistive sensors

2. Progress toward a thousandfold reduction in 1∕f noise in magnetic sensors using an ac microelectromechanical system flux concentrator (invited)

3. Magnetic noise in a low-power picotesla magnetoresistive sensor

4. Low aspect ratio micron size tunnel magnetoresistance sensors with permanent magnet biasing integrated in the top lead

5. Fabrication of magnetic tunnel junctions with a bottom synthetic antiferro-coupled free layers for high sensitive magnetic field sensor devices

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