Field-effect transistors on molecular beam epitaxy GaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2710476
Reference15 articles.
1. R. J. Chaffin and L. R. Dawson, Proceedings of the 1981 Conference on High-Temperature Electronics (IEEE, New York, 1981), pp. 55–58.
2. Recent Advances in Gallium Phosphide Junction Devices for High-Temperature Electronic Applications
3. A high temperature GaP MESFET
4. Long-term charge storage in GaP pn junction capacitors
5. Quasi-direct UV/blue GaP avalanche photodetectors
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