Impact of dielectric capping layer thickness on the contact formation between n+-type passivating contacts and screen-printed fire-through silver pastes-Reference-Cited by-同舟云学术

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Impact of dielectric capping layer thickness on the contact formation between n+-type passivating contacts and screen-printed fire-through silver pastes

Published:2022 Issue: Volume: Page:
ISSN:0094-243X
Container-title:SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics
language:
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Author:

Min Byungsul,Wehmeier Nadine,Brendemuehl Till,Haase Felix,Larionova Yevgeniya,Nasebandt Lasse,Schulte-Huxel Henning,Peibst Robby,Brendel Rolf

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0089239

Reference17 articles.

1. n-Type polysilicon passivating contact for industrial bifacial n-type solar cells

2. monoPoly™ cells: Large-area crystalline silicon solar cells with fire-through screen printed contact to doped polysilicon surfaces

3. Fully screen-printed bifacial large area 22.6% N-type Si solar cell with lightly doped ion-implanted boron emitter and tunnel oxide passivated rear contact

4. 24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design

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