Identification of photo-induced spin-triplet recombination centers situated at Si surfaces and Si/SiO2 interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4820824
Reference20 articles.
1. Spin dependent recombination at the silicon/silicon dioxide interface
2. Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
3. Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers
4. Electron paramagnetic resonance studies of Si-SiO2interface defects
5. The silicon-silicon dioxide system: Its microstructure and imperfections
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1. Influence of solvent electron affinity on paramagnetic defects in hybrid Si/SiOx luminescent nanoparticles;Journal of Nanoparticle Research;2019-06
2. Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers;Journal of Applied Physics;2018-01-31
3. Effects of Spin-Dependent Recombination and EPR Spectroscopy of the Excited Triplet States of Point Defects in Silicon;Applied Magnetic Resonance;2016-06-02
4. Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon;Journal of Applied Physics;2015-12-28
5. Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures;Semiconductors;2014-11
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