Zinc and phosphorus co-implantation in indium phosphide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121720
Reference18 articles.
1. Ion Implantation Processing of Gaas and Related Compounds
2. Ion implantation in III–V compound semiconductors
3. Ion implantation in III–V compounds
4. Ion‐implantedn‐ andp‐type layers in InP
5. The effect of implant temperature on the electrical characteristics of ion implanted indium phosphide
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1. Core and surface engineering in binary, ternary and quaternary semiconductor nanocrystals—A critical review;Synthetic Metals;2016-12
2. Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots: doping and surface passivation;Beilstein Journal of Nanotechnology;2015-06-01
3. Rapid synthesis of highly luminescent InP and InP/ZnS nanocrystals;Journal of Materials Chemistry;2008
4. Ion beam synthesis and n-type doping of group III Nx V1 xalloys;Semiconductor Science and Technology;2002-07-09
5. Formation of diluted III–V nitride thin films by N ion implantation;Journal of Applied Physics;2001-09
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