Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors
Author:
Funder
National Natural Science Foundation of China
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4739307
Reference12 articles.
1. Very-high power density AlGaN/GaN HEMTs
2. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
3. Ionized-impurity scattering of quasi-two-dimensional quantum-confined carriers
4. Electronic properties of two-dimensional systems
5. Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors
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1. Charged surface states scattering in AlGaN/GaN heterostructures;Physica E: Low-dimensional Systems and Nanostructures;2017-06
2. Impact of pressure on transport properties of AlGaN/GaN high electron mobility transistor;Physica E: Low-dimensional Systems and Nanostructures;2015-11
3. Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices;Journal of Applied Physics;2015-02-14
4. Effect of parabolic potential well profile on multisubband electron mobility in a coupled quantum well in presence of an external electric field;Superlattices and Microstructures;2013-09
5. Lattice site location and luminescence studies of AlxGa1−xN alloys doped with thulium ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-07
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