Defects inm-face GaN films grown by halide vapor phase epitaxy on LiAlO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1599962
Reference17 articles.
1. The Czochralski growth of single crystal lithium aluminate, LiAlO2
2. The crystal structure and anomalous dispersion of γ-LiAlO2
3. γ-LiAlO2 single crystal: a novel substrate for GaN epitaxy
4. MOCVD Growth of GaN on LiAlO2(100) Substrates
5. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
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