Morphological control and structural characteristics of crystalline Ge–C systems: Carbide nanorods, quantum dots, and epitaxial heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123422
Reference11 articles.
1. Optical band gap of the ternary semiconductor Si1−x−yGexCy
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3. In situmonitoring of strain relaxation during antimony‐mediated growth of Ge and Ge1−yCylayers on Si(001) using reflection high energy electron diffraction
4. In situmonitoring of strain relaxation during antimony‐mediated growth of Ge and Ge1−yCylayers on Si(001) using reflection high energy electron diffraction
5. Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy
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