The effect of nonlinear ion transport on the rate of laser‐induced electrochemical etching of semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345571
Reference4 articles.
1. Basic mechanisms in laser etching and deposition
2. Hole transport equation analysis of photoelectrochemical etching resolution
3. Autowave processes in a distributed chemical system
4. Photoelectrochemical etching of n-GaAs and n-InP
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1. Wet etching of GaAs using synchrotron radiation x rays;Journal of Applied Physics;2001-03
2. Synchrotron-radiation-induced anisotropic wet etching of GaAs;Applied Physics Letters;1999-10-11
3. Laser-induced etching of Si surfaces: The effect of weak background light;Journal of Applied Physics;1996
4. Laser‐induced etching of InP using two laser frequencies simultaneously;Journal of Applied Physics;1992-03
5. Insitumonitoring of a laser‐induced etched grating on InP: Thin‐film cell configuration;Applied Physics Letters;1990-12-31
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