X‐ray investigation of the ordered structure in AlGaInP quaternary alloys
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102057
Reference9 articles.
1. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
2. Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition
3. Diffuse scattering and superstructure reflections from In1−y(AlxGa1−x)yP
4. Disordering of the ordered structure in MOCVD-grown GaInP and AlGaInP by impurity diffusion and thermal annealing
5. Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical properties and ordering of AlxGa1−xN MBE-layers;Journal of Crystal Growth;2001-07
2. Gallium arsenide heterostructures;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
3. Chapter 2 Gallium arsenide heterostructures;Processing and Properties of Compound Semiconductors;2001
4. Ordering thermodynamics of surface and subsurface layers in theGa1−xInxP alloy;Physical Review B;1992-05-15
5. Spontaneous surface-induced long-range order inGa0.5In0.5P alloys;Physical Review B;1991-11-15
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