Fabrication of three‐terminal resonant tunneling devices in silicon‐based material
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111838
Reference19 articles.
1. Resonant tunneling in semiconductor double barriers
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4. Confinement and single-electron tunneling in Schottky-gated, laterally squeezed double-barrier quantum-well heterostructures
5. Confinement and single-electron tunneling in Schottky-gated, laterally squeezed double-barrier quantum-well heterostructures
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1. Strain-Induced Quantum Ring Hole States in a Gated Vertical Quantum Dot;Physical Review Letters;2002-08-13
2. Operation of a novel negative differential conductance transistor fabricated in a strained Si quantum well;IEEE Electron Device Letters;1997-09
3. The future of microelectronics: Evolution or revolution?;Microelectronic Engineering;1996-12
4. Fabrication of Si double barrier structure;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-11
5. Strain relaxation in silicon‐germanium microstructures observed by resonant tunneling spectroscopy;Applied Physics Letters;1995-12-25
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