Transient single‐longitudinal mode stabilization in double active layer GaInAsP/InP laser under high‐bit rate modulation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93842
Reference4 articles.
1. Low-threshold-current distributed-feedback InGaAsP/InP CW lasers
2. Room-temperature CW operation of 1.60 μm GaInAsP/InP buried-heterostructure integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide
3. 102 km unrepeatered monomode fibre system experiment at 140 Mbit/s with an injection locked 1.52 μm laser transmitter
4. Short-cavity InGaAsP injection lasers: Dependence of mode spectra and single-longitudinal-mode power on cavity length
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependence of emission wavelength in 1.3μm GaInAsP/InP GRIN SCH MQW laser diodes grown by MOCVD;Semiconductor Science and Technology;1990-06-01
2. Phased arrays of buried‐ridge InP/InGaAsP diode lasers;Applied Physics Letters;1985-01-15
3. Chapter 5 The Cleaved-Couple-Cavity (C3) Laser;Lightwave Communications Technology - Part B Semiconductor Injection Lasers, I;1985
4. Phase‐locking characteristics of coupled ridge‐waveguide InP/InGaAsP diode lasers;Applied Physics Letters;1984-12
5. Analysis of two-section coupled-cavity semiconductor lasers;IEEE Journal of Quantum Electronics;1984-04
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