High-energy recoil implantation of boron into silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126832
Reference10 articles.
1. Recoil implantation of antimony in silicon
2. Recoil implantation of antimony into silicon
3. Recoil implantation of boron into silicon for ultrashallow junction formation: Modeling, fabrication, and characterization
4. Recoil range distributions in multilayered targets
5. Calculations of nuclear stopping, ranges, and straggling in the low-energy region
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3. Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation;Journal of Applied Physics;2004-07
4. Enhancement of boron solid solubility in Si by point-defect engineering;Applied Physics Letters;2004-04-26
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