Decoupling trade-off thermoelectric relations and controlled out-plane lattice dynamics in few-layer MoS2

Abstract

We report on the thermoelectric properties of few-layer MoS2 fabricated on 290 nm-SiO2/Si by a two-zone atmospheric pressure chemical vapor deposition (CVD) technique. The decoupling of electrical conductivity and Seebeck coefficient is noticed after 592 K, where the electrical conductivity ( σ) is linearly increased and the Seebeck coefficient ( S) is exponentially increased. The highest values of σ and S are 10.9 S cm−1 and 10312 nV K−1 at 734 K, respectively, and the highest power factor ( S2 σ) is 116 nW m−1 K−2 at 734 K. The calculated out-plane ( A1 g) displacement and the decreased A1 g phonon lifetime are revealing the reduced phonon transport. The current investigations paved an attention to decouple the thermoelectric properties of few layer MoS2.