Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates-Reference-Cited by-同舟云学术

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

Published:1988-06-13 Issue:24 Volume:52 Page:2028-2030
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nouhi A.,Radhakrishnan G.,Katz J.,Koliwad K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.99571

Reference16 articles.

1. The organometallic heteroepitaxy of CdTe and HgCdTe on GaAs substrates

2. Metalorganic vapor deposition of CdTe and HgCdTe epitaxial films on InSb and GaAs substrates

3. The growth and characterization of CdTe epitaxial layers on CdTe and InSb by metalorganic chemical vapor deposition

4. Growth of (100)CdTe films of high structural perfection on (100)GaAs substrates by molecular beam epitaxy

5. Low defect density CdTe(111)‐GaAs(001) heterostructures by molecular beam epitaxy

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1. Crystal Growth and Surfaces;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

2. Growth of thick CdTe epilayers on GaAs substrates and evaluation of CdTe/n+-GaAs heterojunction diodes for an X-ray imaging detector;Journal of Electronic Materials;2004-06

3. MOVPE growth of thick CdTe heteroepitaxial layers for X‐ray imaging detectors;physica status solidi (c);2004-03

4. Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates;Journal of Electronic Materials;2003-07

5. Growth and Characterization of Thick (100) CdTe Layers on (100) GaAs and (100) GaAs/Si Substrates by Metalorganic Vapor Phase Epitaxy;Japanese Journal of Applied Physics;2002-10-01