Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme-Reference-Cited by-同舟云学术

Wide operation margin of toggle mode switching for magnetic random access memory with preceding negative pulse writing scheme

Published:2006-03-13 Issue:11 Volume:88 Page:112501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hung Chien-Chung,Lee Yuan-Jen,Kao Ming-Jer,Wang Yung-Hung,Huang Rei-Fu,Chen Wei-Chuan,Chen Young-Shying,Shen Kuei-Hung,Tsai Ming-Jinn,Lin Wen-Chin,Tang Denny Duan-Lee,Chao Shiuh

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2181628

Reference9 articles.

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2. A 16-Mb MRAM featuring bootstrapped write drivers

3. The switching behaviors of submicron magnetic tunnel junctions with synthetic antiferromagnetic free layers

4. Spin valve and dual spin valve heads with synthetic antiferromagnets

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