A new mechanism for spontaneous nanostructure formation on bottom-patterned compliant substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120129
Reference11 articles.
1. Comparison of damage in the dry etching of GaAs by conventional reactive ion etching and by reactive ion etching with an electron cyclotron resonance generated plasma
2. Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs
3. Heterogeneous nucleation of coherently strained islands during epitaxial growth of Ge on Si(110)
4. Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
5. In situ fabrication of self‐aligned InGaAs quantum dots on GaAs multiatomic steps by metalorganic chemical vapor deposition
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