The nature of a 2050–2150‐cm−1infrared band in neutron‐transmutation‐doped silicon grown by the floating‐zone method in a hydrogen atmosphere
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.340342
Reference9 articles.
1. Bonding and thermal stability of implanted hydrogen in silicon
2. New SiH IR bands in neutron-irradiated silicon grown in hydrogen atmosphere
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4. THE PRESENCE OF Si-H BONDS IN Si SINGLE CRYSTALS AND ITS INFLUENCES
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1. Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient;Microelectronic Engineering;2003-04
2. Oxygen precipitation in floating-zone silicon grown in hydrogen ambience and its application;Materials Science and Engineering: B;2001-06
3. Hydrogen catalyzed oxygen precipitation in crystalline silicon;Materials Science and Engineering: B;2000-03
4. Defect annealing of neutron-irradiated silicon crystals;Journal of Materials Science;1995-08
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