The open circuit voltage in amorphous silicon p-i-n solar cells and its relationship to material, device and dark diode parameters-Reference-Cited by-同舟云学术

The open circuit voltage in amorphous silicon p-i-n solar cells and its relationship to material, device and dark diode parameters

Published:2004-08-15 Issue:4 Volume:96 Page:2261-2271
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dutta U.,Chatterjee P.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1769092

Reference27 articles.

1. The relation of dark and illuminated diode parameters to the open‐circuit voltage of amorphous siliconp‐i‐nsolar cells

2. Effect ofp/iinterface layer on darkJ‐Vcharacteristics andVocinp‐i‐na‐Si solar cells

3. What causes the inverse Staebler-Wronski effect in p-type a-Si:H?

4. B. Rech, C. Beneking, S. Wieder, and H. Wagner, Proceedings of the Fourteenth European Photovoltaic Solar Energy Conference, Barcelona, Spain, 30 June–4 July 1997, edited by H.A. Ossenbrink, P. Helm, and H. Ehman (H. S. Stephens & Associates, Bedford, UK, 1997), p. 574.

5. Open-Circuit Voltage Physics in Amorphous Silicon Solar Cells

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