On the activation and passivation of precursors for process-induced positive charges in Hf-dielectric stacks
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3093679
Reference22 articles.
1. Special reliability features for Hf-based high-/spl kappa/ gate dielectrics
2. Determination of capture cross sections for as-grown electron traps in HfO2∕HfSiO stacks
3. Interface Defects in HfO[sub 2], LaSiO[sub x], and Gd[sub 2]O[sub 3] High-k/Metal–Gate Structures on Silicon
4. Temperature Dependence of Channel Mobility in>tex<$hbox HfO_2$>/tex<-Gated NMOSFETs
5. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
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1. Oxide Defects;Bias Temperature Instability for Devices and Circuits;2013-09-10
2. Investigation of Abnormal $V_{\rm TH}/V_{\rm FB}$ Shifts Under Operating Conditions in Flash Memory Cells With $ \hbox{Al}_{2}\hbox{O}_{3}$ High-$\kappa$ Gate Stacks;IEEE Transactions on Electron Devices;2012-07
3. An assessment of the mobility degradation induced by remote charge scattering;Applied Physics Letters;2009-12-28
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