Tuning magnetic anisotropy in SrRuO3 thin film by Ru vacancies induced phase transition

Author:

Zhang Jian1ORCID,Jiang Zhongyuan1ORCID,Huang Haoliang2ORCID,Shan Zheling1,Wang Lenan1,Wang Jianlin2ORCID,Huang Qiuping2ORCID,Fu Zhengping12ORCID,Lu Yalin12ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Science and Technology of China 1 , Hefei, Anhui 230026, People's Republic of China

2. Anhui Laboratory of Advanced Photon Science and Technology and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China 2 , Hefei 230026, People's Republic of China

Abstract

Effective control of magnetic anisotropy, including perpendicular magnetic anisotropy (PMA) and lateral magnetic anisotropy, is important for the design of low-power and high-density spintronic devices. However, the rarity of oxide materials with PMA and stringent conditions required to control magnetic anisotropy have prevented its large-scale application. Here, we demonstrate that the magnetic anisotropy of SrRuO3 films can be specified on-demand by adjusting the content of Ru vacancies to control the structure of the films. With the increase in Ru vacancies, the structure of SrRuO3 changes from orthorhombic to tetragonal. The field angle dependence of the Hall resistance confirmed that the uniaxial magnetic easy axis of SrRuO3 thin films continuously rotates in the (100)pc crystallographic plane, which is identical to the continuous phase transition. Our results not only provide a way to continuously tune the physical properties of epitaxial oxide films by continuously changing the composition but also help to provide guidance for the on-demand design of spintronic devices.

Funder

Natural Science Foundation of Anhui Province

National Natural Science Foundation of China

National Key Research and Development Program of China

Anhui Initiative in Quantum Information Technologies

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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