Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature
Author:
Affiliation:
1. Technical University of Munich, Walter Schottky Institute and Physics Department, Garching 85748, Germany
2. Ludwig-Maximilians-University Munich, Department of Chemistry, Munich 81377, Germany
Funder
FP7 Ideas: European Research Council
Deutsche Forschungsgemeinschaft
Germany's Excellence Strategy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0048807
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