Thermally activated reversible threshold shifts in YBa2Cu3O7−δ/ yttria‐stabilized zirconia/Si capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107953
Reference9 articles.
1. Superconducting properties of YBa2Cu3O7 − x thin films deposited on silicon covered by epitaxial stabilized ZrO2
2. Electrical characterization of metal‐insulator‐semiconductor diodes fabricated from laser‐ablated YBa2Cu3O7−δ /yttria‐stabilized zirconia films on Si substrates
3. The dielectric properties of yttria-stabilized zirconia
4. Low‐temperature dielectric properties of candidate substrates for high‐temperature superconductors: LaAlO3and ZrO2: 9.5 mol % Y2O3
5. High critical currents in strained epitaxial YBa2Cu3O7−δon Si
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1. Fabrication and characterization of ferroelectric oxide thin films;Handbook of Thin Films;2002
2. Temperature dependence of capacitance/current–voltage characteristics of highly (0001)-oriented YMnO[sub 3] thin films on Si;Applied Physics Letters;2000
3. Improvement of the Electrical Properties of YMnO3 Thin Films in A Metal/Ferroelectric/Si Structure;MRS Proceedings;1999
4. Growth and characterization of yttrium oxide thin layers on silicon deposited by yttrium evaporation in atomic oxygen;Vacuum;1995-08
5. High-Tc superconductors on buffered silicon: materials properties and device applications;Materials Science and Engineering: R: Reports;1995-04-15
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