Theoretical formalism to understand the role of strain in the tailoring of hole masses inp‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors-Reference-Cited by-同舟云学术

Theoretical formalism to understand the role of strain in the tailoring of hole masses inp‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors

Published:1987-12-07 Issue:23 Volume:51 Page:1943-1945
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jaffe Mark,Sekiguchi Yoshihiko,Singh Jasprit

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.98308

Reference7 articles.

1. p-Channel MODFET's using GaAlAs/GaAs two-dimensional hole gas

2. p‐channel, strained quantum well, field‐effect transistor

3. High-transconductance p-channel InGaAs/AlGaAs modulation-doped field effect transistors

4. Effective masses of holes at GaAs-AlGaAs heterojunctions

5. Valence-Band Parameters in Cubic Semiconductors

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