Affiliation:
1. Special Display and Imaging Technology Innovation Center of Anhui Province, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, Academy of Opto-Electric Technology, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, 193 Tunxi Road, Hefei 230009, People's Republic of China
Abstract
All inorganic cesium lead halide perovskite (CsPbX3; X = Cl, Br, or I) quantum dots (QDs) have received widespread attention as a class of favorable optical gain materials. The key issue of CsPbX3 perovskites is their instability under light or exposure to air. Notably, the inherent phase instability of CsPbI3 QDs severely restricts the development of red-light emission. Herein, we propose a simple method to post-process CsPbBr3 QDs with a ZnI2 solution. The prepared CsPbBryI3−y (named CPBI- z, where z corresponds to the photoluminescence peaks' position) QDs exhibit adjustable photoluminescence in the range of 550–640 nm. The photoluminescence quantum yield is increased from 73.3% to 97.2% as the surface defects of QDs are passivated by I− and Zn2+. Compared with the pristine CsPbBr3 QDs, the post-processed QDs are more stable under ultraviolet irradiation and in the air. Aside from that, under 532 nm nanosecond laser excitation, CPBI- z QD films exhibit excellent amplified spontaneous emission performance. The CPBI-640 QD film shows a low threshold, 102 μJ cm−2 for red stable amplified spontaneous emission.
Funder
National Key Research and Development Program of China
Hefei Municipal Natural Science Foundation
National Natural Science Foundation of Anhui Province
Fundamental Research Funds for Central Universities
Subject
Physics and Astronomy (miscellaneous)
Cited by
1 articles.
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