Mode‐locked pulse operation of GaAs/AlGaAs field effect transistor self‐electro‐optic effect device smart pixels and saturation considerations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112451
Reference13 articles.
1. Operation of a fully integrated GaAs-Al/sub x/Ga/sub 1-x/As FET-SEED: a basic optically addressed integrated circuit
2. Batch fabrication and operation of GaAs-Al/sub x/Ga/sub 1-x/As field-effect transistor-self-electrooptic effect device (FET-SEED) smart pixel arrays
3. Evolution of the SEED technology: bistable logic gates to optoelectronic smart pixels
4. 4/spl times/4 arrays of FET-SEED embedded control 2/spl times/1 optoelectronic switching nodes with electrical fan-out
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1. The Application of Ozone in Semiconductor Cleaning Processes: The Solubility Issue;Journal of The Electrochemical Society;2001
2. Optoelectronics in VLSI Technology;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
3. Receiver sensitivity improvement by impulsive coding;IEEE Photonics Technology Letters;1997-05
4. Operation of diode-clamped FET-SEED optical receivers with low-contrast single-ended signals;IEEE Photonics Technology Letters;1995-12
5. Transmission of 1-Gbit/s data patterns through smart pixels by use of picosecond laser pulses;Optics Letters;1995-11-15
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