Anomalous electrical behavior related to the formation of TeAsV−Gadefect complexes in laser mixed Au/Te/Au/GaAs structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106198
Reference22 articles.
1. Ge redistribution in solid‐phase Ge/Pd/GaAs ohmic contact formation
2. Metal-N-type semiconductor ohmic contact with a shallow N+ surface layer
3. Tunneling in CdTe Schottky Barriers
4. Excess Tunnel Current in Silicon Esaki Junctions
5. Interface states in abrupt semiconductor heterojunctions
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The ohmic contact formation mechanism in laser beam mixed Au/Te/Au/GaAs structures;Applied Surface Science;1993-05
2. Identification of the Ohmic-contact formation mechanism in the Au/Te/Au/GaAs system;Physical Review B;1992-05-15
3. Vacancy-associated Te sites in GaAs;Physical Review B;1992-03-15
4. Evidence for a defect-assisted low resistive conductivity in cw laser beam mixed Au/Te/Au/GaAs contacts.;MRS Proceedings;1992
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