Investigation of Si1−xGexfilms and SimGensuperlattices by x‐ray diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351877
Reference20 articles.
1. X-ray diffraction from one-dimensional superlattices in GaAs1−xPxcrystals
2. X-ray diffraction study of a one-dimensional GaAs–AlAs superlattice
3. Some aspects of the X-ray structural characterization of (Ga1−xAlxAs)n1(GaAs)n2/GaAs(001) superlattices
4. Effects of strain and layer thickness on the growth of InxGa1−xAs–GaAs strained-layer superlattices
5. X‐ray rocking curve analysis of superlattices
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1. STRAIN RELAXATION IN SiGe VIRTUAL SUBSTRATE CHARACTERIZED BY HIGH RESOLUTION X-RAY DIFFRACTION;International Journal of Modern Physics B;2010-09-10
2. Strain modulation of SiGe virtual substrate;Applied Physics Letters;2006-04-17
3. Independent determination of Ge content in thin Si1−xGex quantum wells by spectroscopic ellipsometry;Applied Physics Letters;2000-07-17
4. Photoinduced Reaction of Digermane with Si(111);The Journal of Physical Chemistry A;1999-11-18
5. Photoconductivity of Si/Ge buffers, superlattices, and multiple quantum wells;Thin Solid Films;1999-03
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