Reduction in the rate of increase of spontaneous emission from double‐heterostructure injection lasers at threshold
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654287
Reference13 articles.
1. The Current Dependence of the Intensity of Spontaneous Emission of GaAs Injection Lasers to Full Operating Power
2. Spontaneous and Stimulated Recombination Radiation in Semiconductors
3. Quantum-Mechanical Rate Equations for Semiconductor Lasers
4. Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasers
5. Spectral Characteristics of GaAs Lasers Operating in ``Fabry‐Perot'' Modes
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2. Longitudinal mode behavior of transverse‐mode‐stabilized InGaAsP/InP double‐heterostructure laser;Applied Physics Letters;1981-06-15
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