Characterization of Mn‐doped InAsxP1−xgrown by organometallic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Characterization of Mn‐doped InAsxP1−xgrown by organometallic vapor phase epitaxy

Published:1988-04-04 Issue:14 Volume:52 Page:1155-1157
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang K.,Wessels B. W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.99190

Reference13 articles.

1. Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxy

2. On the position of energy levels related to transition-metal impurities in III-V semiconductors

3. A universal trend in the binding energies of deep impurities in semiconductors

4. Electronic and optical properties of Fe‐doped InP prepared by organometallic vapor‐phase epitaxy

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and magnetic properties of epitaxial In1–xMnxSb semiconductor alloys with x > 0.08;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-05

2. InMnAs Thin Films and Heterostructures;Handbook of Spintronic Semiconductors;2010-05-31

3. High-temperature ferromagnetism in epitaxial (In,Mn)Sb films;Physical Review B;2010-03-16

4. Growth and characterization of manganese-doped InAsP;Journal of Crystal Growth;2008-11

5. Ferromagnetic semiconductors and the role of disorder;New Journal of Physics;2008-05-23

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