Silicon anodic‐plasma oxidation during magnetron sputtering of yttria‐stabilized zirconia
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112657
Reference11 articles.
1. Orientation relationships of epitaxial oxide buffer layers on silicon (100) for high‐temperature superconducting YBa2Cu3O7−xfilms
2. Epitaxial YBa2Cu3O7−δ films on silicon using combined YSZ/Y2O3 buffer layers
3. High critical current densities in epitaxial YBa2Cu3O7−δthin films on silicon‐on‐sapphire
4. Reactions at the interfaces of thin films of Y‐Ba‐Cu‐ and Zr‐oxides with Si substrates
5. RF-magnetron sputtered lanthanum aluminate buffer layers on silicon
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1. Reactive sputtering of metal targets: influence of reactive atoms implantation;SPIE Proceedings;2008-03-03
2. Extension of the temperature range of epitaxial YSZ film growth on Si(100) during magnetron sputtering;Technical Physics;2007-05
3. MBE Growth of the top Layer in Si/YSZ/Si Structure;Progress in SOI Structures and Devices Operating at Extreme Conditions;2002
4. Plasma characteristics at off-axis high pressure magnetron YBa2Cu3O7−δ sputtering;Journal of Applied Physics;1997-08-15
5. Surface morphology, microstructure and electrical properties of Y-Ba-Cu-O thin films;IEEE Transactions on Appiled Superconductivity;1997-06
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