Correlation of current–voltage–temperature analysis with deep level defects in epitaxial GaN films-Reference-Cited by-同舟云学术

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Correlation of current–voltage–temperature analysis with deep level defects in epitaxial GaN films

Published:2015-06-08 Issue:23 Volume:106 Page:233501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Reddy Anurag G.¹,Aggarwal Neha¹,Krishna T. C. Shibin¹,Singh Manju²,Rakshit Rajib²,Gupta Govind¹

Affiliation:

1. Physics of Energy Harvesting, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K. S. Krishnan Road, New Delhi-110012, India

2. Quantum Phenomena and Applications, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K. S. Krishnan Road, New Delhi-110012, India

Funder

Department of Science and Technology, Ministry of Science and Technology (DST)

Council of Scientific and Industrial Research (CSIR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922250

Reference8 articles.

1. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

2. InGaN/GaN multiple quantum well solar cells with long operating wavelengths

3. Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

4. Correlation between current–voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition

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