Optical Generation Spectrum for the Electron Thermal‐Injection Mechanism in GaAs Diodes-Reference-Cited by-同舟云学术

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Optical Generation Spectrum for the Electron Thermal‐Injection Mechanism in GaAs Diodes

Published:1964-09 Issue:9 Volume:35 Page:2777-2779
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Carr W. N.,Biard J. R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1713840

Reference6 articles.

1. EFFECT OF DOPING ON THE EMISSION PEAK AND THE ABSORPTION EDGE OF GaAs

2. Common Occurrence of Artifacts or ``Ghost'' Peaks in Semiconductor Injection Electroluminescence Spectra

3. Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eV

4. Electroluminescence and Photoluminescence of GaAs at 77°K

5. Infrared Transmission and Fluorescence of Doped Gallium Arsenide

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron-beam-controlled high-power semiconductor switches;IEEE Transactions on Electron Devices;1989-09

2. Effect of feedback carrier excitation on LED external quantum efficiency;IEE Proceedings I Solid State and Electron Devices;1982

3. The injection symmetry in high-doped semiconductorp + n junctions;Acta Physica Academiae Scientiarum Hungaricae;1981-07

4. INTRODUCTION;Luminescence and the Light Emitting Diode;1978

5. Self‐excited luminescence in GaAs;Journal of Applied Physics;1973-06

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