Components of strong magnetoresistance in Mn implanted Ge
Author:
Funder
USAFOSR
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867623
Reference39 articles.
1. Properties of Germanium Doped with Manganese
2. Ferromagnetism in Mn-doped Ge
3. Magnetoresistance of Mn:Ge ferromagnetic nanoclusters in a diluted magnetic semiconductor matrix
4. Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix
5. Memory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Large nonlinear Hall effect in (FeCo)0.67Ge0.33/Ge heterojunctions;International Journal of Modern Physics B;2019-05-20
2. Scaling of the Hall effects beyond the quantum resistance threshold in oxidized CoFeB;Physical Review B;2017-06-14
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