Exciton properties for MoS2 grown with the horizontal and vertical orientation

Author:

Yang Ming-Ming1ORCID,Tan Li1ORCID,Gao Qian1ORCID,Yan Qi-Geng2ORCID,Xia Wen-Xin1,Liu Yan-Liang1,Hu Xiao-Wen1ORCID,Wu Chun-Lin1,Liang Bao-Lai1ORCID,Zhao Xiao-Hui1,Cong Ri-Dong1ORCID,Li Xiao-Li1ORCID

Affiliation:

1. National and-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science & Technology, Hebei University 1 , Baoding 071002, People's Republic of China

2. Department of Physics, Baoding University 2 , Baoding 071000, China

Abstract

The exciton properties play a crucial role in controlling the optical properties of molybdenum disulfide (MoS2). In this work, horizontally oriented MoS2 (H-MoS2), horizontally and vertically oriented MoS2 (HV-MoS2), and vertically oriented MoS2 (V-MoS2) on the same SiO2/Si substrate have been synthesized and investigated using temperature-dependent photoluminescence spectroscopy from 7 to 300 K. Except for direct excitons called as A and B peaks, indirect exciton named as I peak is discovered with the splitting of three peaks. Compared with direct excitons, indirect excitons appear to be more susceptible to the orientation of MoS2. The exciton activation energies are larger, and the exciton–phonon coupling is stronger in V-MoS2 than in H-MoS2. The exciton properties of HV-MoS2 are more similar to those of V-MoS2, but there are some unusual phenomena. Our work provides a reference for optoelectronic applications based on transition-metal dichalcogenides represented by MoS2 grown with horizontal and vertical orientations.

Funder

Natural Science Foundation of Hebei Province

Advanced Talents Incubation Program of the Hebei University

Central Government Guided Local Science and Technology Development Fund Project

Post-graduate's Innovation Fund Project of Hebei Province

Science and Technology Project of Hebei Education Department

Baoding University

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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