Improved memristive switching of graphite/Nb:SrTiO 3 interfaces by tuning Fermi levels and dielectric constants
Author:
Affiliation:
1. Department of Physics, University of Florida, Gainesville, Florida 32611, USA
2. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32601, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5037950
Reference35 articles.
1. Resistive switching in transition metal oxides
2. Nanoionics-based resistive switching memories
3. Memristive devices for computing
4. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
5. Current switching of resistive states in magnetoresistive manganites
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