Microscopic gate-modulation imaging of charge and field distribution in polycrystalline organic transistors-Reference-Cited by-同舟云学术

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Microscopic gate-modulation imaging of charge and field distribution in polycrystalline organic transistors

Published:2018-04-02 Issue:13 Volume:123 Page:135301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Matsuoka Satoshi¹²,Tsutsumi Jun'ya¹^ORCID,Kamata Toshihide¹²,Hasegawa Tatsuo¹³^ORCID

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan

2. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8571, Japan

3. Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Funder

MEXT | Japan Society for the Promotion of Science

MEXT | Japan Science and Technology Agency

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference32 articles.

1. The Hall effect in polycrystalline and powdered semiconductors

2. Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors

3. Stacked pentacene layer organic thin-film transistors with improved characteristics

4. Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators

5. Fully-printed high-performance organic thin-film transistors and circuitry on one-micron-thick polymer films

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