Enhancement of metal–semiconductor barrier height with superthin silicon dioxide films deposited on gallium arsenide by liquid phase deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1365057
Reference27 articles.
1. Reducing the effective height of a Schottky barrier using low‐energy ion implantation
2. Increasing the effective height of a Schottky barrier using low‐energy ion implantation
3. Silicon dioxide passivation of gallium arsenide by liquid phase deposition
4. Fundamental electrical properties of fluorinated and N2O plasma‐annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures
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