Conversion mechanism of conductivity of phosphorus-doped ZnO films induced by post-annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4805778
Reference35 articles.
1. Production and annealing of electron irradiation damage in ZnO
2. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films
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4. Pulsed-laser-deposited p-type ZnO films with phosphorus doping
5. Characteristics of a phosphorus-doped p-type ZnO film by MBE
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1. n-Type conducting P doped ZnO thin films via chemical vapor deposition;RSC Advances;2020
2. Enhancing Acceptor-Based Optical Behavior in Phosphorus-Doped ZnO Thin Films Using Boron as Compensating Species;ACS Applied Electronic Materials;2019-02-22
3. Conversion mechanism of conductivity and properties of nitrogen implanted ZnO single crystals induced by post-annealing;Journal of Materials Science: Materials in Electronics;2019-01-17
4. Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering;Journal of Applied Physics;2017-06-14
5. Formation of p-type ZnO thin film through co-implantation;Nanotechnology;2016-12-09
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